q?v~zy??q?v?_rb]q??qcabfq ksx13003h series ksb13003h KSC13003H / ksu13003h npn silicon power transistor, vcbo= 900v, vceo= 530v, ic= 1.5a general description ? high voltage, high speed power switching ? suitable for electronic ballast up to 21w features ? vcbo = 900v ? vceo = 530v ? vbeo = 9v ? ic = 1.5a 1 2 3 ordering information ordering number package pin assignment packing 123 ksb13003h to-92 b c e ammo ksb13003hr to-92 e c b ammo KSC13003H to-126 b c e bulk ksu13003h to-251 b c e tube 1 2 3 1 2 3 to-92 to-126 to-251
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series ksb13003h KSC13003H / ksu13003h npn silicon power transistor, vcbo= 900v, vceo= 530v, ic= 1.5a characteristics symbol rating unit to-92 to-126 to-251 collector-base voltage v cbo 900 v collector-emitter voltage v ceo 530 v emitter-base voltage v ebo 9v collector current(dc) i c 1.5 a collector current(pulse) i cp 3a base current i b 0.75 a collector dissipation(tc=25 e ) p c 1.1 20 25 w junction temperature t j 150 e storage temperature t stg -65~150 e absolute maximum ratings tc=25 e unless otherwise noted electrical characteristics tc=25 e unless otherwise noted * pulse test: pulse width ? v ' x w \ & |